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KMID : 1059519840280030149
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Journal of the Korean Chemical Society
1984 Volume.28 No. 3 p.149 ~ p.154
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Defect Structure and Electrical Conduction Mechanism of Yttrium Sesquioxide
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Kim Keu-Hong
Park Soung-Ho
Choi Jae-Shi
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Abstract
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The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050℃ and oxygen partial pressures from 1 × 10-5 to 2 × 10-1atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log PO2 are found to be linear at PO2's of 10-5 to 10-1 atm. The electrical conductivity dependences on PO2 are found to be σ∝PO21/6 at 850~950℃, σ∝PO23/16 at 950~1050℃ and σ∝PO21/7.5 ~ σ∝PO21/8.3 at 650~800℃, respectively. The defect structures are Oi" at 850~950℃ and VM''' at 950~1050℃. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.
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KEYWORD
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